APTGT100TA120TPG APTGT100TA120TPG ? rev 0 april, 2009 www.microsemi.com 1-5 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com r1 ntc2 ntc1 w g4 e3 g3 e4 g2 g1 vbus1 vbus2 e1 v u 0/vbus1 e2 0/vbus2 vbus3 e6 g5 e5 g6 0/vbus3 e6 g6 e5 g5 e3 g1 vbus 1 vbus 3 vbus 2 g3 g2 e2 0/vbus 1 vw e4 g4 0/vbus 2 0/vbus 3 e1 u ntc1 ntc2 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 140 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1100v v ces = 1200v i c = 100a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor fo r temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? very low (12mm) profile ? each leg can be easily paralleled to achieve a phase leg of three times the current capability ? module can be configured as a three phase bridge ? module can be configured as a boost followed by a full bridge ? triple phase leg fast trench + field stop igbt power module
APTGT100TA120TPG APTGT100TA120TPG ? rev 0 april, 2009 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 7200 c oes output capacitance 400 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 300 pf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 90 ns e on turn on energy t j = 125c 10 e off turn off energy v ge = 15v v bus = 600v i c = 100a r g = 3.9 t j = 125c 10 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 100a v ge = 0v t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 9 q rr reverse recovery charge t j = 125c 18 c t j = 25c 5 e r reverse recovery energy i f = 100a v r = 600v di/dt =2000a/s t j = 125c 9 mj
APTGT100TA120TPG APTGT100TA120TPG ? rev 0 april, 2009 www.microsemi.com 3-5 temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.26 r thjc junction to case thermal resistance diode 0.48 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g sp6-p package outline (dimensions in mm) 9 places (3:1) all dimensions marked " * " are tolerenced as : see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT100TA120TPG APTGT100TA120TPG ? rev 0 april, 2009 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.9 ? t j = 125c eon eoff er 0 5 10 15 20 25 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 200 240 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =3.9 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT100TA120TPG APTGT100TA120TPG ? rev 0 april, 2009 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 00.40.81.21.622.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 20406080100120140 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3.9 ? t j =125c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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